OXYGEN ON CLEAVED SILICON (111) - EFFECTS OF ATOMIC STEPS AND RESIDUAL GASES

被引：45

作者：

KASUPKE, N

HENZLER, M

机构：

来源：

SURFACE SCIENCE | 1980年 / 92卷 / 2-3期

关键词：

D O I：

10.1016/0039-6028(80)90213-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：407 / 416

页数：10

相关论文

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[1] ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .2.
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[2] STRUCTURE DEPENDENT OXIDATION OF CLEAN SI(111) SURFACES
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[3] LEITFAHIGKEIT UND FELDEFFEKT REINER SILIZIUMSPALTFLACHEN
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[4] ROUGHNESS OF CLEAVED SEMICONDUCTOR SURFACES
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[5] ADSORPTION OF WATER-VAPOR ON CLEAN CLEAVED GERMANIUM .1. STRUCTURAL AND KINETIC-PROPERTIES
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[J]. SURFACE SCIENCE, 1973, 40 (02) : 388 - 396
[6] RELATIONS BETWEEN ELECTRONIC PROPERTIES OF CLEAN SURFACES AND ACTIVATED ADSORPTION
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[J]. SURFACE SCIENCE, 1975, 53 (DEC) : 444 - 460
[7] ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .1.
IBACH, H
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[J]. SURFACE SCIENCE, 1973, 38 (02) : 433 - 454
[8] KASUPKE N, UNPUBLISHED
[9] ADSORPTION OF OXYGEN ON W(100) - ADSORPTION KINETICS AND ELECTRON STIMULATED DESORPTION
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[J]. SURFACE SCIENCE, 1972, 33 (02) : 355 - +
[10] BINDING STATES OF WATER-VAPOR ON CLEAVED GERMANIUM
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HENZLER, M
[J]. SURFACE SCIENCE, 1975, 51 (01) : 75 - 88