PULSED-LASER DEPOSITION OF EPITAXIAL BAXSR1-XTIO3 YBA2CU3O7 BILAYERS ON LAALO3 SUBSTRATES

YBa2Cu3O7/BaxSr1-xTiO3 bilayers were grown epitaxially on LaAlO3 substrates using the pulsed laser deposition method. A microstructural investigation revealed that all compositions of BaxSr1-xTiO3 investigated from x = 0 to x = 1 showed (001) orientation and epitaxy across the interface as analyzed by Rutherford backscattering spectroscopy channel yields of <8% for BaTiO3 on YBa2Cu3O7 films. Dielectric properties including the dielectric constant, k, and the loss tangent, tan delta, were measured as a function of composition, and it was found that the highest k-values (k = 400) existed for the x = 0.72 composition.