PREPARATION OF YBBA2CU3O7-X FILMS ON SI(100) SUBSTRATES USING SRTIO3 BUFFER LAYERS

被引:36
作者
ISHIWARA, H
TSUJI, N
MORI, H
NOHIRA, H
机构
[1] Precision and Intelligence Laboratory, Tokyo Institute of Technology, Midoriku, Yokohama 227
关键词
D O I
10.1063/1.107517
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report that superconducting YbBa2Cu3O7-x films are formed on Si(100) substrates using SrTiO3 films as buffer layers. SrTiO3 buffer layers are prepared on Si using a focused electron beam evaporation method, while YbBa2Cu3O7-x films are prepared using a dc arc discharge evaporation method. It has been shown that the SrTiO3 thin film is effective to transmit the crystalline information of a Si (100) substrate to the YbBa2Cu3O7-x film and to block the diffusion of Si atoms into the film. The highest T(c) (zero) of the film was 73 K.
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页码:1459 / 1461
页数:3
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