PREPARATION OF YBBA2CU3O7-X FILMS ON SI(100) SUBSTRATES USING SRTIO3 BUFFER LAYERS

We report that superconducting YbBa2Cu3O7-x films are formed on Si(100) substrates using SrTiO3 films as buffer layers. SrTiO3 buffer layers are prepared on Si using a focused electron beam evaporation method, while YbBa2Cu3O7-x films are prepared using a dc arc discharge evaporation method. It has been shown that the SrTiO3 thin film is effective to transmit the crystalline information of a Si (100) substrate to the YbBa2Cu3O7-x film and to block the diffusion of Si atoms into the film. The highest T(c) (zero) of the film was 73 K.