STRUCTURE AND PROPERTIES OF COEVAPORATED WSIX FILMS

[1] A CRITICAL COMPARISON OF SILICIDE FILM DEPOSITION TECHNIQUES [J]. THIN SOLID FILMS, 1984, 118 (02) : 163 - 170

[2] BRORS DL, 1983, SOLID STATE TECHNOL, V26, P183

[3] EFFECTS OF GRAIN-BOUNDARIES ON THE RESISTIVITY OF CO-SPUTTERED WSI2 FILMS [J]. THIN SOLID FILMS, 1982, 93 (3-4) : 341 - 346

[4] CROWDER BL, 1977, J ELECTROCHEM SOC, V124, pC388

[5] PROPERTIES OF MOSI2 AND WSI2 MAGNETRON CO-SPUTTERED FROM ELEMENTAL TARGETS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (06) : 1023 - 1036

[6] ELECTRICAL-PROPERTIES OF COMPOSITE EVAPORATED SILICIDE POLYSILICON ELECTRODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1307 - 1312

[7] NICOLET MA, 1983, FORMATION CHARACTERI, pCH6

[8] PROPERTIES OF LOW-PRESSURE CVD TUNGSTEN SILICIDE FOR MOS VLSI INTERCONNECTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1497 - 1505

[1] A CRITICAL COMPARISON OF SILICIDE FILM DEPOSITION TECHNIQUES [J]. THIN SOLID FILMS, 1984, 118 (02) : 163 - 170

[2] BRORS DL, 1983, SOLID STATE TECHNOL, V26, P183

[3] EFFECTS OF GRAIN-BOUNDARIES ON THE RESISTIVITY OF CO-SPUTTERED WSI2 FILMS [J]. THIN SOLID FILMS, 1982, 93 (3-4) : 341 - 346

[4] CROWDER BL, 1977, J ELECTROCHEM SOC, V124, pC388

[5] PROPERTIES OF MOSI2 AND WSI2 MAGNETRON CO-SPUTTERED FROM ELEMENTAL TARGETS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (06) : 1023 - 1036

[6] ELECTRICAL-PROPERTIES OF COMPOSITE EVAPORATED SILICIDE POLYSILICON ELECTRODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1307 - 1312

[7] NICOLET MA, 1983, FORMATION CHARACTERI, pCH6

[8] PROPERTIES OF LOW-PRESSURE CVD TUNGSTEN SILICIDE FOR MOS VLSI INTERCONNECTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1497 - 1505