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ENHANCEMENT OF OXIDE BREAK-UP BY IMPLANTATION OF FLUORINE IN POLY-SI EMITTER CONTACTED P-+-N SHALLOW JUNCTION FORMATION

被引：12
作者：
WU, SL
LEE, CL
LEI, TF
CHEN, CF
CHEN, LJ
HO, KZ
LING, YC
机构：
[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN
[2] NATL TSING HUA UNIV,DEPT MAT SCI & ENGN,HSINCHU 300,TAIWAN
[3] NATL TSING HUA UNIV,DEPT CHEM SCI,HSINCHU 300,TAIWAN
来源：
IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 04期
关键词：
D O I：
10.1109/55.285410
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900-degrees-C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device.
引用
收藏
页码：120 / 122
页数：3
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