A NEW METHOD FOR THE DETERMINATION OF DOPANT AND TRAP CONCENTRATION PROFILES IN SEMICONDUCTORS

被引：33

作者：

LI, MF ^{[1
]}

SAH, CT ^{[1
]}

机构：

[1] UNIV ILLINOIS, SOLID STATE ELECTR LAB, URBANA, IL 61801 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 02期

关键词：

D O I：

10.1109/T-ED.1982.20701

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：306 / 315

页数：10

共 21 条

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