PROPERTIES OF ZNSXSE1-X-ZN1-YCDYSE QUANTUM-WELL STRUCTURES

被引：9

作者：

REN, J

BOWERS, KA

COOK, JW

SCHETZINA, JF

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 02期

关键词：

D O I：

10.1116/1.586150

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Molecular-beam epitaxy has been employed to grown ZnSxSe1-x-Zn1-y CdySe multilayers. Double heterostructures consisting of a multiple quantum well structure of ZnSxSe1-x-Zn1-yCdySe sandwiched between ZnSxSe1-x have also been fabricated. Photopumped stimulated emission has been observed from these structures. In addition, double heterostructures with n-type and p-type ZnSxSe1-x cladding layers emit bright blue electroluminescence at 2.601 eV (476 nm) at room temperature.

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页码：909 / 911

页数：3

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