C-60-INDUCED RECONSTRUCTION OF THE GE(111) SURFACE

被引：34

作者：

XU, H ^{[1
]}

CHEN, DM ^{[1
]}

CREAGER, WN ^{[1
]}

机构：

[1] HARVARD UNIV,DEPT PHYS,CAMBRIDGE,MA 02138

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.50.8454

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a direct observation of surface reconstruction induced by the adsorption of C-60 molecules. At submonolayer and full monolayer coverage of C-60 on Ge(111), two surface phases (3 root 3 X 3 root 3R 30 degrees and root 13 X root 13R 14 degrees) as well as a localized metastable 5 X 5 phase are identified by low-energy electron diffraction and scanning tunneling microscopy. The formation of the two phases is facilitated by induced reconstructions of the Ge surface into different surface structures. Models for these surface structures are proposed that elucidate the close interplay between the adsorbed C-60 molecules and the host Ge surface.

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页码：8454 / 8459

页数：6

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