OXYGEN IMPLANTER FOR SIMOX

被引：9

作者：

GUERRA, M

BENVENISTE, V

RYDING, G

DOUGLASHAMILTON, DH

REED, M

GAGNE, G

ARMSTRONG, A

MACK, M

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 6卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(85)90611-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：63 / 69

页数：7

共 9 条

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PINIZZOTTO, RF ;

YUAN, HT ;

BELLAVANCE, DW .

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[5]

LAM HW, 1982, VLSI ELECTRONICS MIC, V4, pCH1

[6] ELECTRIC-FIELD-SHIELDING LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J].

NAKASHIMA, S ;

AKIYA, M ;

KATO, K .

ELECTRONICS LETTERS, 1983, 19 (15) :568-570

[7] A HIGH-SPEED BURIED CHANNEL MOSFET ISOLATED BY AN IMPLANTED SILICON DIOXIDE LAYER [J].

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OMURA, Y ;

SANO, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) :1084-1087

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[9] CMOS ON BURIED NITRIDE - A VLSI SOI TECHNOLOGY [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1515-1520

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