OPTIMIZATION OF SPACER LAYER THICKNESS IN N-ALXGA1-XAS-PARA+-GAAS HETEROJUNCTION DIODES GROWN BY MOLECULAR-BEAM EPITAXY

被引：3

作者：

KHAMSEHPOUR, B ^{[1
]}

SINGER, KE ^{[1
]}

VANDENBERG, JA ^{[1
]}

VICKERMAN, JC ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT CHEM,MANCHESTER M60 1QD,LANCS,ENGLAND

来源：

关键词：

D O I：

10.1049/el:19860430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTOR DIODES

引用

页码：627 / 629

页数：3

共 6 条

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[J]. APPLIED PHYSICS LETTERS, 1985, 46 (06) : 600 - 602
[5] Shockley W., 1951, US Patent, Patent No. 2569347
[6] MOLECULAR-BEAM EPITAXIAL GAAS LAYERS FOR MESFETS
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[J]. APPLIED PHYSICS LETTERS, 1976, 29 (11) : 746 - 748