VERY-LOW RESISTIVITY AL-SI OHMIC CONTACTS TO BORON-DOPED POLYCRYSTALLINE DIAMOND FILMS

被引：16

作者：

WERNER, M ^{[1
]}

DORSCH, O ^{[1
]}

BAERWIND, HU ^{[1
]}

ERSOY, A ^{[1
]}

OBERMEIER, E ^{[1
]}

JOHNSTON, C ^{[1
]}

ROMANI, S ^{[1
]}

CHALKER, PR ^{[1
]}

MOORE, V ^{[1
]}

BUCKLEYGOLDER, IM ^{[1
]}

机构：

[1] AEA TECHNOL,DIDCOT OX11 0RA,ENGLAND

来源：

关键词：

D O I：

10.1016/0925-9635(94)90313-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects on the contact resistivity of annealing Al-Si (99:1) contacts on diamond with different B concentrations have been investigated. The change of the current-voltage characteristic from rectifying to ohmic on lightly doped samples, and the drop of the contact resistivity by orders of magnitude for more heavily B-doped samples after annealing at 450-degrees-C in N2, are attributed to the formation of SiC at the metal-diamond interface. The existence of the SiC interface has been verified by X-ray-induced photoelectron spectroscopy. In addition, the contact resistivity is a very sensitive function of doping at high doping concentrations. Contact resistivities as low as about 10(-7) OMEGA cm2 have been achieved.

引用

页码：983 / 985

页数：3

共 11 条

[1] CONTACT RESISTANCE AND CONTACT RESISTIVITY [J].