SECONDARY-ELECTRON EMISSION ENHANCEMENT AND DEFECT CONTRAST FROM DIAMOND FOLLOWING EXPOSURE TO ATOMIC-HYDROGEN

被引：27

作者：

MALTA, DP ^{[1
]}

POSTHILL, JB ^{[1
]}

HUMPHREYS, TP ^{[1
]}

THOMAS, RE ^{[1
]}

FOUNTAIN, GG ^{[1
]}

RUDDER, RA ^{[1
]}

HUDSON, GC ^{[1
]}

MANTINI, MJ ^{[1
]}

MARKUNAS, RJ ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 15期

关键词：

D O I：

10.1063/1.111745

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polished nominal (100) surfaces of four types of diamonds were exposed to atomic hydrogen by hot filament cracking of H-2 gas or by immersion in a H-2 plasma discharge. Both types IIa and IIb (100) diamond surfaces exhibited the following characteristic changes: (a) secondary electron (SE) yield increased by a factor of approximately 30 as measured in a scanning electron microscope (SEM), (b) near-surface, nontopographical defects were observable directly using the conventional SE mode of the SEM, (c) surface conductance increased by up to 10 orders of magnitude. These changes were observed only weakly in nitrogen-containing types Ia and Ib diamonds.

引用

页码：1929 / 1931

页数：3

共 10 条

[1] DIRECT OBSERVATION OF THE DEFECT STRUCTURE OF POLYCRYSTALLINE DIAMOND BY SCANNING ELECTRON-MICROSCOPY [J].