ARSENIC PILEUP AT THE SIO2/SI INTERFACE

被引：19

作者：

SATO, Y

NAKATA, J

IMAI, K

ARAI, E

机构：

[1] NTT LSI Laboratories, 3–1 Morinosato Wakamiya, Atsugi-shi

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 02期

关键词：

D O I：

10.1149/1.2044117

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Sheet resistance measurements and a Rutherford backscattering spectroscopy analysis show arsenic piles up at the interface between SiO2 and single-crystalline silicon. The arsenic piles up mainly in the SiO2 and can be removed by hydrofluoric acid. Less arsenic piles up than does phosphorus. These results are qualitatively discussed in terms of stress reduction at the interface.

引用

页码：655 / 660

页数：6

共 27 条

[21] SEGREGATION OF ARSENIC TO THE GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON [J].