ACCUMULATION OF IMPLANTED ARSENIC AT THE INTERFACE DURING ANNEALING ON THERMALLY OXIDIZED SI AND SIO2 COVERED SI

Arsenic implanted into Si through SiO2 and into Si covered with sputtered SiO2 after implantation accumulated largely in the near Si surface region during annealing. Annealing at 950°C for 1000 min was enough to anneal out the accumulation of As on the Si/sputtered SiO2 structure. Howeverm the accumulation of As in the Si/SiO2 structure was not annealed out even after an annealing of 30000 min. The As accumulation in the near interface on the Si/sputtered SiO2 structure occurred mainly through stress and that on the prolonged annealed Si/SiO2 structure resulted from the precipitation of As at dislocations. © 1989.