ELECTRON-TRANSPORT COEFFICIENTS IN DUSTY ARGON PLASMAS

[1] DORRIN VI, 1986, SOV J QUANTUM ELECTR, V16, P1034

[2] Ellis H. W., 1976, Atomic Data and Nuclear Data Tables, V17, P177, DOI 10.1016/0092-640X(76)90001-2

[3] FISHER C, 1989, COMMUNICATION

[4] HOUPIS HLF, 1987, J GEOPHYS RES, V92, P12507

[5] Karachevtsev G. V., 1976, Soviet Physics - Technical Physics, V21, P1386

[6] EFFECTS OF INERT-GAS DILUTION OF SILANE ON PLASMA-DEPOSITED A-SI-H FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 331 - 333

[7] MITCHNER M, 1973, PARTIALLY IONIZED GA, P126

[8] ELECTRODE MATERIAL RELEASE INTO A VACUUM GAP AND MECHANISMS OF ELECTRICAL BREAKDOWN [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) : 125 - 129

[9] PREPARATIONS OF A-SI-H FROM HIGHER SILANES (SINH2N+2) WITH THE HIGH GROWTH-RATE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) : L639 - L642

[10] SPATIAL DEPENDENCE OF PARTICLE LIGHT-SCATTERING IN AN RF SILANE DISCHARGE [J]. APPLIED PHYSICS LETTERS, 1985, 46 (03) : 253 - 255

[1] DORRIN VI, 1986, SOV J QUANTUM ELECTR, V16, P1034

[2] Ellis H. W., 1976, Atomic Data and Nuclear Data Tables, V17, P177, DOI 10.1016/0092-640X(76)90001-2

[3] FISHER C, 1989, COMMUNICATION

[4] HOUPIS HLF, 1987, J GEOPHYS RES, V92, P12507

[5] Karachevtsev G. V., 1976, Soviet Physics - Technical Physics, V21, P1386

[6] EFFECTS OF INERT-GAS DILUTION OF SILANE ON PLASMA-DEPOSITED A-SI-H FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 331 - 333

[7] MITCHNER M, 1973, PARTIALLY IONIZED GA, P126

[8] ELECTRODE MATERIAL RELEASE INTO A VACUUM GAP AND MECHANISMS OF ELECTRICAL BREAKDOWN [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) : 125 - 129

[9] PREPARATIONS OF A-SI-H FROM HIGHER SILANES (SINH2N+2) WITH THE HIGH GROWTH-RATE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) : L639 - L642

[10] SPATIAL DEPENDENCE OF PARTICLE LIGHT-SCATTERING IN AN RF SILANE DISCHARGE [J]. APPLIED PHYSICS LETTERS, 1985, 46 (03) : 253 - 255