SYSTEMATIC STUDY OF NEUTRON-IRRADIATION EFFECTS ON THE PERFORMANCE OF FZ AND MCZ SILICON DETECTORS

被引：4

作者：

BOSETTI, M

FURETTA, C

LEROY, C

PENSOTTI, S

RANCOITA, PG

RATTAGGI, M

REDAELLI, M

SEIDMAN, A

TERZI, G

机构：

[1] INFN, I-20133 MILAN, ITALY

[2] UNIV MONTREAL, MONTREAL H3C 3JT, PQ, CANADA

[3] UNIV ROME, I-00100 ROME, ITALY

[4] UNIV MILAN, I-20122 MILAN, ITALY

[5] TEL AVIV UNIV, IL-69978 TEL AVIV, ISRAEL

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1994年 / 345卷 / 02期

关键词：

D O I：

10.1016/0168-9002(94)90998-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Charge collection efficiency dependence on reverse bias voltage (V(B)) and on a neutron fluence (PHI) was studied for both Float-Zone (FZ) and Magnetic-Czochralski (MCZ) silicon detectors, irradiated with fast neutron fluences, larger than 10(13) n/cm2. For both types of irradiated detectors, the charge collection efficiency was found to have a logarithimc dependence on PHI and its dependence on V(B) indicated that the relation between charge-carrier concentration and full depletion voltage is not according to the standard equation of a p+-n-n+ device.

引用

页码：250 / 255

页数：6

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