IRON DIFFUSIVITY IN SILICON - IMPACT OF CHARGE-STATE

被引：20

作者：

KOVESHNIKOV, SV

ROZGONYI, GA

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

[2] CHERNOGOLOVKA MICOELECTR TECHNOL INST,CHERNOGOLOVKA 142432,RUSSIA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 07期

关键词：

D O I：

10.1063/1.113411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of iron charge state on its diffusion in p-type Si near room temperature has been investigated by C-V and depth dependent deep-level transient spectroscopy measurements. The migration enthalpies of both positively charged and neutral iron were found to be 0.92 and 0.56 eV, respectively. Disagreement between the theoretical predictions and experimentally observed trend in iron diffusion is briefly discussed in terms of diffusion path, elastic strain, and Coulombic interaction versus impurity charge state. © 1995 American Institute of Physics.

引用

页码：860 / 862

页数：3

共 16 条

[1]

FISTUL VI, 1989, SOV PHYS SEMICOND+, V23, P424

[2] CHARGE-STATE-DEPENDENT DIFFUSION AND CARRIER-EMISSION-LIMITED DRIFT OF IRON IN SILICON [J].

HEISER, T ;

MESLI, A .

PHYSICAL REVIEW LETTERS, 1992, 68 (07) :978-981

[3]

ISOBE T, 1989, JPN J APPL PHYS, V7, P1282

[4] DIFFUSION OF NEGATIVELY CHARGED HYDROGEN IN SILICON [J].

JOHNSON, NM ;

HERRING, C .

PHYSICAL REVIEW B, 1992, 46 (23) :15554-15557

[5]

KIKUCHI H, 1993, PV941 EL CHEM SOC P, P298

[6] ELECTRONICALLY CONTROLLED REACTIONS OF INTERSTITIAL IRON IN SILICON [J].

KIMERLING, LC ;

BENTON, JL .

PHYSICA B & C, 1983, 116 (1-3) :297-300

[7]

KIMERLING LC, 1981, I PHYS C SER, V59, P217

[8]

LUDWIG GW, 1962, SOLID STATE PHYS, V13, P223

[9] DIFFUSION-COEFFICIENT OF IRON IN SILICON AT ROOM-TEMPERATURE [J].

NAKASHIMA, H ;

ISOBE, T ;

YAMAMOTO, Y ;

HASHIMOTO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (08) :1542-1543

[10]

ROZGONYI GA, 1994, PV9410 EL SOC P SER, P868

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