IMPURITY-INDUCED DISORDERING OF ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES WITH (SI2)X(GAAS)1-X BARRIERS

被引：9

作者：

GUIDO, LJ

HOLONYAK, N

HSIEH, KC

KALISKI, RW

BAKER, JE

DEPPE, DG

BURNHAM, RD

THORNTON, RL

PAOLI, TL

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

关键词：

D O I：

10.1007/BF02667795

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：87 / 91

页数：5

共 14 条

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[12] DISORDER OF AN ALXGA1-XAS-GAAS SUPERLATTICE BY DONOR DIFFUSION [J].

MEEHAN, K ;

HOLONYAK, N ;

BROWN, JM ;

NIXON, MA ;

GAVRILOVIC, P ;

BURNHAM, RD .

OHNO, H ;

IKEDA, E ;

HASEGAWA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06) :L369-L370

[14]

TERAMOTO I, 1972, J PHYS CHEM SOLIDS, V33, P2089, DOI 10.1016/S0022-3697(72)80239-7