PROPERTIES OF HOT CARRIER INDUCED TRAPS IN MOSFETS CHARACTERIZED BY THE FLOATING-GATE TECHNIQUE

被引：15

作者：

VUILLAUME, D ^{[1
]}

DOYLE, BS ^{[1
]}

机构：

[1] DIGITAL EQUIPMENT CORP, HUDSON, MA 01749 USA

来源：

SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 08期

关键词：

D O I：

10.1016/0038-1101(92)90011-Z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A measurement of the low-level (10(-17)-10(-12) A) electronic gate current in Si MOSFETs by the floating-gate technique is presented as a powerful tool to characterize the properties of defects induced in MOSFETs by hot-carrier-effects. This paper discusses the use of this technique to analyze: (i) the creation of new traps in the oxide in the gate-drain overlap region: (ii) the determination of the carrier capture properties of these traps; (iii) their localization; and (iv) their nature (interface states vs oxide traps). Finally, it is shown how the floating-gate technique is able to detect process-related reliability problems. The paper emphazises the new possibilities offered by the floating-gate technique compared to a standard characterization technique like charge-pumping.

引用

页码：1099 / 1107

页数：9

共 17 条

[1] CHARGE PUMPING IN MOS DEVICES [J].