THERMAL RELAXATION KINETICS OF STRAINED SI/SI1-XGEX HETEROSTRUCTURES DETERMINED BY DIRECT MEASUREMENT OF MOSAICITY AND LATTICE-PARAMETER VARIATIONS

被引:16
作者
SARDELA, MR [1 ]
HANSSON, GV [1 ]
机构
[1] LINKOPING UNIV, DEPT PHYS, S-58183 LINKOPING, SWEDEN
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1995年 / 13卷 / 02期
关键词
D O I
10.1116/1.579416
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:314 / 326
页数:13
相关论文
共 44 条
[1]  
[Anonymous], COMMUNICATION
[2]   LUMINESCENCE OF STRAINED SI1-XGEX ALLOY LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
ARBETENGELS, V ;
TIJERO, JMG ;
MANISSADJIAN, A ;
WANG, KL ;
HIGGS, V .
APPLIED PHYSICS LETTERS, 1992, 61 (21) :2586-2588
[3]   X-RAY-DIFFRACTION OF MULTILAYERS AND SUPERLATTICES [J].
BARTELS, WJ ;
HORNSTRA, J ;
LOBEEK, DJW .
ACTA CRYSTALLOGRAPHICA SECTION A, 1986, 42 :539-545
[4]  
BEAN JC, 1988, SILICON MOL BEAM EPI, pCH2
[5]   OBSERVATION OF A (2X8) SURFACE RECONSTRUCTION ON SI1-XGEX ALLOYS GROWN ON (100) SI BY MOLECULAR-BEAM EPITAXY [J].
CROKE, ET ;
HAUENSTEIN, RJ ;
FU, TC ;
MCGILL, TC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04) :2301-2306
[6]   LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS [J].
DISMUKES, JP ;
PAFF, RJ ;
EKSTROM, L .
JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (10) :3021-&
[7]   RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J].
DODSON, BW ;
TSAO, JY .
APPLIED PHYSICS LETTERS, 1987, 51 (17) :1325-1327
[8]   WORK-HARDENING AND STRAIN RELAXATION IN STRAINED-LAYER BUFFERS [J].
DODSON, BW .
APPLIED PHYSICS LETTERS, 1988, 53 (01) :37-38
[9]   CORRECTION [J].
DODSON, BW .
APPLIED PHYSICS LETTERS, 1988, 52 (10) :852-852
[10]  
DODSON BW, 1988, MATER RES SOC S P, V116, P493