DETERMINATION OF TRAPPED OXIDE CHARGE IN FLASH-TYPE EEPROMS WITH HEAVILY OXYNITRIDED TUNNEL OXIDE-FILMS

被引：6

作者：

FUKUDA, H

HAYASHI, T

UCHIYAMA, A

IWABUCHI, T

机构：

[1] Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd., Hachioji, Tokyo 193

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 11期

关键词：

MEMORIES; METAL OXIDE SEMICONDUCTOR STRUCTURES; SILICON; INSULATING MATERIALS AND INSULATORS;

D O I：

10.1049/el:19930631

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Flash-type EEPROMs with rapid thermal oxide (RTO) and rapid thermal oxynitrided oxide (RTONO) films are fabricated. The oxide trap density in the program and erase (P/E) cycles is determined by the shifts in I-V curves for the source-gate and drain-gate edges, respectively. The RTONO flash cell shows a drastically reduced trap density of less than 3 x 10(12)/cm2 after 10(4) P/E cycles. This value is one order smaller than that of the RTO flash cell. This smaller oxide trap density originates in the stable Si-N bond formation near the SiO2/Si interface, and results in lower threshold voltage shifts.

引用

页码：947 / 949

页数：3

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