NOVEL SINGLE-STEP RAPID THERMAL OXYNITRIDATION TECHNOLOGY FOR FORMING HIGHLY RELIABLE ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY TUNNEL OXIDE-FILMS

被引：3

作者：

FUKUDA, H

YASUDA, M

IWABUCHI, T

机构：

[1] Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd, Hachioji, Tokyo, 550-5, Higashiasakawa

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1B期

关键词：

SILICON; THIN INSULATOR FILM; OXYNITRIDED FILM; RAPID THERMAL PROCESSING; MOS STRUCTURE; EEPROM;

D O I：

10.1143/JJAP.32.447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have proposed a novel single-step rapid thermal oxynitridation (SS-RTON) technology to obtain highly reliable ultrathin electrically erasable programmable read only memory (EEPROM) tunnel oxide films. The SS-RTON process can be achieved by rapid switching of the ambient gases (O2 --> N2O) at the midpoint of the oxidation period, while maintaining the oxidation temperature. The results indicate almost no increase in the oxide-trap-assisted leakage and/or in the electron trap density, resulting in the increase of the charge-to-breakdown value. This behavior of the SS-RTON film can be explained by the idea that the trap sites are reduced by forming strong Si-N bonds in bulk SiO2.

引用

页码：447 / 451

页数：5

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