JUNCTION SOLAR-CELLS MADE WITH MOLECULAR-BEAM GLOW-DISCHARGE BOMBARDMENT

被引：7

作者：

CAINE, EJ ^{[1
]}

CHARLSON, EJ ^{[1
]}

机构：

[1] UNIV MISSOURI,DEPT ELECT ENGN,COLUMBIA,MO 65211

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1984年 / 13卷 / 02期

关键词：

D O I：

10.1007/BF02656684

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：341 / 372

页数：32

共 40 条

[11]

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[12]

FREEMAN JH, 1975, APPLICATIONS ION BEA, P340

[13]

Kirkpatrick A. R., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P820

[14]

Krimmel E. F., 1973, Radiation Effects, V19, P83, DOI 10.1080/00337577308232223

[15]

LAMONT LT, 1979, SOLID STATE TECHNOL, V22, P107

[16]

LAMONT LT, COMMUNICATION

[17] PERIODIC REGROWTH PHENOMENA PRODUCED BY LASER ANNEALING OF ION-IMPLANTED SILICON [J].

LEAMY, HJ ;

ROZGONYI, GA ;

SHENG, TT ;

CELLER, GK .

APPLIED PHYSICS LETTERS, 1978, 32 (09) :535-537

[18] DAMAGE EFFECTS IN BORON AND BF2 ION-IMPLANTED P+-N JUNCTIONS IN SILICON [J].

MACIVER, BA ;

GREENSTEIN, E .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) :273-275

[19]

MANDELKORN J, 1972, 9TH P IEEE PHOT SPEC, P66

[20] ORIGIN OF PERIODIC SURFACE-STRUCTURE OF LASER-ANNEALED SEMICONDUCTORS [J].

MARACAS, GN ;

HARRIS, GL ;

LEE, CA ;

MCFARLANE, RA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :453-455

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