FABRICATION AND PROPERTIES OF POLYCRYSTALLINE-SIC/SI STRUCTURES FOR SI HETEROJUNCTION DEVICES

被引：17

作者：

CHAUDHRY, MI

WRIGHT, RL

机构：

[1] Department of Electrical and Computer Engineering, Clarkson University, Potsdam

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 01期

关键词：

D O I：

10.1063/1.105519

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline-SiC/Si heterojunctions are fabricated by growing n-type polycrystalline SiC films on p-type Si substrates using a low-temperature chemical vapor deposition technique. The heterojunctions show rectification with low leakage currents. The typical value of the ideality factor is 1.2. This study indicates that polycrystalline SiC is a promising material for fabricating Si heterojunction devices.

引用

页码：51 / 53

页数：3

共 6 条

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI
ADDAMIANO, A
SPRAGUE, JA
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 525 - 527
[2] EPITAXIAL-GROWTH OF BETA-SIC ON SI BY LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION
CHAUDHRY, MI
WRIGHT, RL
[J]. JOURNAL OF MATERIALS RESEARCH, 1990, 5 (08) : 1595 - 1598
[3] GROWTH-CHARACTERISTICS OF CVD BETA-SILICON CARBIDE
CHENG, DJ
SHYY, WJ
KUO, DH
HON, MH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (12) : 3145 - 3149
[4] EPITAXIAL-GROWTH AND CHARACTERIZATION OF BETA-SIC THIN-FILMS
LIAW, P
DAVIS, RF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (03) : 642 - 648
[5] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES
NISHINO, S
POWELL, JA
WILL, HA
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462
[6] REACTIVE ION ETCHING OF MONOCRYSTALLINE, POLYCRYSTALLINE, AND AMORPHOUS-SILICON CARBIDE IN CF4/O2 MIXTURES
PADIYATH, R
WRIGHT, RL
CHAUDHRY, MI
BABU, SV
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (10) : 1053 - 1055

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