OPTICAL CHARACTERIZATION OF POROUS SILICON BY SYNCHROTRON-RADIATION REFLECTANCE SPECTRA ANALYSES

被引:79
作者
KOSHIDA, N [1 ]
KOYAMA, H [1 ]
SUDA, Y [1 ]
YAMAMOTO, Y [1 ]
ARAKI, M [1 ]
SAITO, T [1 ]
SATO, K [1 ]
SATA, N [1 ]
SHIN, S [1 ]
机构
[1] UNIV TOKYO,INST SOLID STATE PHYS,TANASHI,TOKYO 182,JAPAN
关键词
D O I
10.1063/1.110330
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electronic structure of porous Si(PS) has been characterized by optical reflectance spectra analyses. The reflectance spectra of PS were measured in the photon energy range of 2-27 eV using a synchrotron radiation source. The reflectance at the low energy region was calibrated by the corresponding absolute value which was separately determined from spectroscopic ellipsometry. The spectral response of optical constants were calculated by the Kramers-Kronig analysis. Our results indicate that PS retains some of the characteristic optical features of crystalline Si, and that a blue shift in the absorption edge occurs in PS.
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页码:2774 / 2776
页数:3
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共 21 条
[1]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[2]   AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON [J].
BEALE, MIJ ;
BENJAMIN, JD ;
UREN, MJ ;
CHEW, NG ;
CULLIS, AG .
JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) :622-636
[3]   PHOTOLUMINESCENCE OF HIGH POROSITY AND OF ELECTROCHEMICALLY OXIDIZED POROUS SILICON LAYERS [J].
BSIESY, A ;
VIAL, JC ;
GASPARD, F ;
HERINO, R ;
LIGEON, M ;
MULLER, F ;
ROMESTAIN, R ;
WASIELA, A ;
HALIMAOUI, A ;
BOMCHIL, G .
SURFACE SCIENCE, 1991, 254 (1-3) :195-200
[4]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[5]   VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON [J].
CULLIS, AG ;
CANHAM, LT .
NATURE, 1991, 353 (6342) :335-338
[6]   UNIMPORTANCE OF SILOXENE IN THE LUMINESCENCE OF POROUS SILICON [J].
FRIEDMAN, SL ;
MARCUS, MA ;
ADLER, DL ;
XIE, YH ;
HARRIS, TD ;
CITRIN, PH .
APPLIED PHYSICS LETTERS, 1993, 62 (16) :1934-1936
[7]   ELECTROLUMINESCENCE IN THE VISIBLE RANGE DURING ANODIC-OXIDATION OF POROUS SILICON FILMS [J].
HALIMAOUI, A ;
OULES, C ;
BOMCHIL, G ;
BSIESY, A ;
GASPARD, F ;
HERINO, R ;
LIGEON, M ;
MULLER, F .
APPLIED PHYSICS LETTERS, 1991, 59 (03) :304-306
[8]   POROSITY AND PORE-SIZE DISTRIBUTIONS OF POROUS SILICON LAYERS [J].
HERINO, R ;
BOMCHIL, G ;
BARLA, K ;
BERTRAND, C ;
GINOUX, JL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8A) :1994-2000
[9]   EFFICIENT VISIBLE PHOTOLUMINESCENCE FROM POROUS SILICON [J].
KOSHIDA, N ;
KOYAMA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (7B) :L1221-L1223
[10]   VISIBLE ELECTROLUMINESCENCE FROM POROUS SILICON [J].
KOSHIDA, N ;
KOYAMA, H .
APPLIED PHYSICS LETTERS, 1992, 60 (03) :347-349