共 28 条
FACET OXIDATION OF INGAAS/GAAS STRAINED QUANTUM-WELL LASERS
被引:34
作者:

OKAYASU, M
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机构: NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato Wakamiya

FUKUDA, M
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机构: NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato Wakamiya

TAKESHITA, T
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机构: NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato Wakamiya

UEHARA, S
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机构: NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato Wakamiya

KURUMADA, K
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机构: NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato Wakamiya
机构:
[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato Wakamiya
关键词:
D O I:
10.1063/1.347396
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Aging tests were carried out on as-cleaved InGaAs/GaAs strained quantum-well ridge waveguide lasers. Although the lasers have immunity to sudden failure and have degradation rate as low as 2 X 10(-5) h-1, after over 6000 h of operation, they readily suffered facet oxidation. The measured oxidation rate was comparable to that of GaAs quantum-well lasers and one order of magnitude higher than that of lattice-matched InGaAs/InP lasers. This high oxidation rate is considered to be caused by light absorption in the vicinity of the facet where the band gap is reduced because of the stress variation from biaxial to uniaxial.
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页码:8346 / 8351
页数:6
相关论文
共 28 条
[1]
MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES
[J].
ADACHI, S
.
JOURNAL OF APPLIED PHYSICS,
1982, 53 (12)
:8775-8792

ADACHI, S
论文数: 0 引用数: 0
h-index: 0
[2]
BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS
[J].
ADAMS, AR
.
ELECTRONICS LETTERS,
1986, 22 (05)
:249-250

ADAMS, AR
论文数: 0 引用数: 0
h-index: 0
机构: Department of Physics, University of Surrey, Guildford GU2 5XH, United Kingdom
[3]
ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES
[J].
ASAI, H
;
OE, K
.
JOURNAL OF APPLIED PHYSICS,
1983, 54 (04)
:2052-2056

ASAI, H
论文数: 0 引用数: 0
h-index: 0

OE, K
论文数: 0 引用数: 0
h-index: 0
[4]
CHARACTERIZATION OF INGAAS-GAAS STRAINED-LAYER LASERS WITH QUANTUM WELLS NEAR THE CRITICAL THICKNESS
[J].
BEERNINK, KJ
;
YORK, PK
;
COLEMAN, JJ
;
WATERS, RG
;
KIM, J
;
WAYMAN, CM
.
APPLIED PHYSICS LETTERS,
1989, 55 (21)
:2167-2169

BEERNINK, KJ
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

YORK, PK
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

COLEMAN, JJ
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

WATERS, RG
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

KIM, J
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

WAYMAN, CM
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[5]
LOW DEGRADATION RATE IN STRAINED INGAAS/ALGAAS SINGLE QUANTUM-WELL LASERS
[J].
BOUR, DP
;
GILBERT, DB
;
FABIAN, KB
;
BEDNARZ, JP
;
ETTENBERG, M
.
IEEE PHOTONICS TECHNOLOGY LETTERS,
1990, 2 (03)
:173-174

BOUR, DP
论文数: 0 引用数: 0
h-index: 0
机构: David Sarnoff Research Center, Princeton

GILBERT, DB
论文数: 0 引用数: 0
h-index: 0
机构: David Sarnoff Research Center, Princeton

FABIAN, KB
论文数: 0 引用数: 0
h-index: 0
机构: David Sarnoff Research Center, Princeton

BEDNARZ, JP
论文数: 0 引用数: 0
h-index: 0
机构: David Sarnoff Research Center, Princeton

ETTENBERG, M
论文数: 0 引用数: 0
h-index: 0
机构: David Sarnoff Research Center, Princeton
[6]
MAPPING OF LOCAL TEMPERATURES ON MIRRORS OF GAAS/ALGAAS LASER-DIODES
[J].
BRUGGER, H
;
EPPERLEIN, PW
.
APPLIED PHYSICS LETTERS,
1990, 56 (11)
:1049-1051

BRUGGER, H
论文数: 0 引用数: 0
h-index: 0
机构:
IBM CORP,ZURICH RES LAB,DIV RES,CH-8803 RUSCHLIKON,SWITZERLAND IBM CORP,ZURICH RES LAB,DIV RES,CH-8803 RUSCHLIKON,SWITZERLAND

EPPERLEIN, PW
论文数: 0 引用数: 0
h-index: 0
机构:
IBM CORP,ZURICH RES LAB,DIV RES,CH-8803 RUSCHLIKON,SWITZERLAND IBM CORP,ZURICH RES LAB,DIV RES,CH-8803 RUSCHLIKON,SWITZERLAND
[7]
LONG-LIVED INGAAS QUANTUM WELL LASERS
[J].
FISCHER, SE
;
WATERS, RG
;
FEKETE, D
;
BALLANTYNE, JM
;
CHEN, YC
;
SOLTZ, BA
.
APPLIED PHYSICS LETTERS,
1989, 54 (19)
:1861-1862

FISCHER, SE
论文数: 0 引用数: 0
h-index: 0
机构: CORNELL UNIV,SCH ELECT ENGN & FIELD APPL PHYS,PHILLIPS HALL,ITHACA,NY 14853

WATERS, RG
论文数: 0 引用数: 0
h-index: 0
机构: CORNELL UNIV,SCH ELECT ENGN & FIELD APPL PHYS,PHILLIPS HALL,ITHACA,NY 14853

FEKETE, D
论文数: 0 引用数: 0
h-index: 0
机构: CORNELL UNIV,SCH ELECT ENGN & FIELD APPL PHYS,PHILLIPS HALL,ITHACA,NY 14853

BALLANTYNE, JM
论文数: 0 引用数: 0
h-index: 0
机构: CORNELL UNIV,SCH ELECT ENGN & FIELD APPL PHYS,PHILLIPS HALL,ITHACA,NY 14853

CHEN, YC
论文数: 0 引用数: 0
h-index: 0
机构: CORNELL UNIV,SCH ELECT ENGN & FIELD APPL PHYS,PHILLIPS HALL,ITHACA,NY 14853

SOLTZ, BA
论文数: 0 引用数: 0
h-index: 0
机构: CORNELL UNIV,SCH ELECT ENGN & FIELD APPL PHYS,PHILLIPS HALL,ITHACA,NY 14853
[8]
FACET OXIDATION OF INGAASP/INP AND INGAAS/INP LASERS
[J].
FUKUDA, M
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1983, 19 (11)
:1692-1698

FUKUDA, M
论文数: 0 引用数: 0
h-index: 0
[9]
ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER
[J].
HASEGAWA, H
;
HARTNAGEL, HL
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976, 123 (05)
:713-723

HASEGAWA, H
论文数: 0 引用数: 0
h-index: 0
机构:
UNIV NEWCASTLE UPON TYNE MERZ LABS,DEPT ELECT & ELECTR ENGN,NEWCASTLE TYNE NE1 7RU,ENGLAND UNIV NEWCASTLE UPON TYNE MERZ LABS,DEPT ELECT & ELECTR ENGN,NEWCASTLE TYNE NE1 7RU,ENGLAND

HARTNAGEL, HL
论文数: 0 引用数: 0
h-index: 0
机构:
UNIV NEWCASTLE UPON TYNE MERZ LABS,DEPT ELECT & ELECTR ENGN,NEWCASTLE TYNE NE1 7RU,ENGLAND UNIV NEWCASTLE UPON TYNE MERZ LABS,DEPT ELECT & ELECTR ENGN,NEWCASTLE TYNE NE1 7RU,ENGLAND
[10]
FACET DEGRADATIONS IN GA1-XALXAS-GA1-YALYAS DOUBLE-HETEROSTRUCTURE LASERS
[J].
HAYAKAWA, T
;
YAMAMOTO, S
;
SAKURAI, T
;
HIJIKATA, T
.
JOURNAL OF APPLIED PHYSICS,
1981, 52 (10)
:6068-6073

HAYAKAWA, T
论文数: 0 引用数: 0
h-index: 0

YAMAMOTO, S
论文数: 0 引用数: 0
h-index: 0

SAKURAI, T
论文数: 0 引用数: 0
h-index: 0

HIJIKATA, T
论文数: 0 引用数: 0
h-index: 0