X-RAY-INVESTIGATION OF TI-SI THIN-FILMS PREPARED BY SOLID-PHASE REACTION

Ti-Si films were prepared by evaporation of a titanium film onto Si LT AN BR 111 RT AN BR , Si LT AN BR 100 RT AN BR and polycrystalline silicon (poly-Si) surfaces with subsequent annealing in vacuum at various temperatures. X-ray diffraction was used to detect the phases formed by solid phase reaction. The X-ray reflection data correspond to TiSi//2 when the sample was heat treated at 750 and 950 degree C, and to TiSi//2 plus TiSi after annealing at 850 degree C. These effects were detected for Ti/Si LT AN BR 111 RT AN BR but not for a Ti/poly-Si multilayer.