ION-IMPLANTATION AS A TOOL TO CONTROL PROPERTIES OF AMORPHOUS HYDROGENATED SILICON

被引：6

作者：

VAVILOV, VS

AKIMCHENKO, IP

KRASNOPEVTSEV, VV

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 94卷 / 01期

关键词：

D O I：

10.1002/pssa.2210940142

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：343 / 350

页数：8

共 12 条

[1] AKIMCHENKO IP, 1982, FIZ TEKH POLUPROV, V16, P656
[2] AKIMCHENKO IP, 1980, 7 LEB I SOV PHYS REP, P12
[3] ANTONENKO AK, 1983, P INT C ION IMPLANTA, P221
[4] TRANSPORT IN LITHIUM-DOPED AMORPHOUS SILICON
BEYER, W
FISCHER, R
OVERHOF, H
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (03): : 205 - 217
[5] DVURECHENSKII AV, 1982, FIZ TEKH POLUPROV, V16, P1969
[6] THE EFFECTS OF ION-IMPLANTATION ON THE ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON
KALBITZER, S
MULLER, G
LECOMBER, PG
SPEAR, WE
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (04): : 439 - 456
[7] KARRIEV AN, 1984, 2 LEB I SOV PHYS REP, P40
[8] KARRIEV AN, 1984, 12 LEB I SOV PHYS RE, P52
[9] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON
SPEAR, WE
LECOMBER, PG
[J]. SOLID STATE COMMUNICATIONS, 1975, 17 (09) : 1193 - 1196
[10] PHOSPHORUS CONCENTRATION IN HYDROGENATED AMORPHOUS SILICON USING ION-IMPLANTED REFERENCES
THOMAS, JH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (06): : 1306 - 1308