STUDY OF ION-BEAM-INDUCED EPITAXY IN SI BY SLOW POSITRON-ANNIHILATION AND RBS CHANNELING

被引：2

作者：

HAYASHI, N ^{[1
]}

SUZUKI, R ^{[1
]}

WATANABE, H ^{[1
]}

SAKAMOTO, I ^{[1
]}

KOBAYASHI, N ^{[1
]}

MIKADO, T ^{[1
]}

YAMAZAKI, T ^{[1
]}

KURIYAMA, K ^{[1
]}

机构：

[1] HOSEI UNIV,KOGANEI,TOKYO 184,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷

关键词：

D O I：

10.1016/0168-583X(93)90726-M

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

RBS channeling analysis and positron annihilation measurements were used to study ion beam induced crystallization in silicon. The epitaxial regrowth of amorphous surface layers in (100) oriented Si substrate has been performed under irradiation with 400 keV Ar+ ions at the temperature of 400-degrees-C. A slow positron pulsing system was used to measure lifetime spectra in the recrystallized near-surface region, and the lifetime was found to increase by 40-70 ps, compared to the as-amorphized state, whereas RBS channeling shows a crystalline recovery from the amorphous structure. The results indicate that vacancy migration and clustering are promoted during the epitaxial recrystallization.

引用

页码：1006 / 1009

页数：4

共 16 条

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