SUBSTRATE AND TARGET VOLTAGE EFFECTS ON SPUTTERED HYDROGENATED AMORPHOUS-SILICON

被引:3
作者
MCGRUER, N
REINHARD, DK
机构
来源
SOLAR ENERGY MATERIALS | 1985年 / 11卷 / 5-6期
关键词
D O I
10.1016/0165-1633(85)90015-2
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
引用
收藏
页码:447 / 454
页数:8
相关论文
共 21 条
[1]  
ALLISON J, 1980, 3RD EC PHOT SOL EN C, P840
[2]   PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J].
ANDERSON, DA ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 36 (03) :695-712
[3]  
ANDERSON DA, 1979, J VAC SCI TECHNOL, V16, P706
[4]   CAPACITANCE STUDIES ON AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES [J].
BEICHLER, J ;
FUHS, W ;
MELL, H ;
WELSCH, HM .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :587-592
[5]  
CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P205
[6]  
FRITZSCHE H, 1981, AIP C P, V73, P318
[7]   OBSERVATION OF 2 MODES OF CURRENT TRANSPORT THROUGH PHOSPHORUS-DOPED AMORPHOUS HYDROGENATED SILICON SCHOTTKY BARRIERS [J].
MADAN, A ;
CZUBATYJ, W ;
YANG, J ;
SHUR, MS ;
SHAW, MP .
APPLIED PHYSICS LETTERS, 1982, 40 (03) :234-236
[8]  
MAISSEL LI, 1970, HDB THIN FILM TECHNO, pCH3
[9]  
MARTIN AM, 1981, AIP C P, V73, P52
[10]  
MCGRUER N, 1983, THESIS MICHIGAN STAT, P59