CARRIER TRAPPING AND RECOMBINATION AT COPPER-DECORATED GRAIN-BOUNDARIES IN SILICON

被引：13

作者：

BRONIATOWSKI, A

机构：

[1] Groupe de Physique des Solides, Université de Paris VII, Paris Cedex 05, 75251

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1992年 / 66卷 / 06期

关键词：

D O I：

10.1080/13642819208220127

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of carrier trapping and recombination at copper-decorated grain boundaries in silicon bicrystals have been investigated by means of deep-level transient spectroscopy and photocapacity experiments. The analysis of the experimental data makes use of a specific model for the recombination properties of the copper microprecipitates in the boundary plane, regarded as metallic inclusions in rectifying contact with the silicon matrix. The value of the recombination velocity of the boundary in particular, as deduced from these experiments, is in accordance with a direct determination by electron-beam-induced current measurements on similar samples.

引用

页码：767 / 786

页数：20

共 18 条

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