THE CRYSTALLINE QUALITY DISTRIBUTION IN CDZNTE SINGLE-CRYSTAL CORRELATED TO THE INTERFACE SHAPE DURING GROWTH

被引：24

作者：

AZOULAY, M ^{[1
]}

ROTTER, S ^{[1
]}

GAFNI, G ^{[1
]}

ROTH, M ^{[1
]}

机构：

[1] HEBREW UNIV JERUSALEM,SCH APPL SCI & TECHNOL,IL-91904 JERUSALEM,ISRAEL

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 116卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(92)90662-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Crystalline quality of CdZnTe single crystals grown by the vertical gradient freeze (VGF) method has been evaluated using the double crystal rocking curve (DCRC) analysis and etch pits density (EPD) measurements. The full width at half maximum (HWHM) values of the DCRCs vary within 40% while the EPD values range from 2 to 8 x 10(4)cm-2 along the crystal growth axis. Best results are obtained for the central part of the crystals, where the growth interface exhibits a nearly planar shape. The results obtained have been used for practical implications With regard to the use of CdZnTe crystals as a substrate material for HgCdTe thin films growth.

引用

页码：515 / 517

页数：3

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