SPUTTERED TUNGSTEN SILICIDES DEPOSITED AT DIFFERENT ARGON PRESSURES

被引：5

作者：

HARA, T ^{[1
]}

TAKAHASHI, S ^{[1
]}

CHEN, SC ^{[1
]}

SAKAMOTO, A ^{[1
]}

MATSUI, H ^{[1
]}

机构：

[1] OKI ELECT IND CO LTD,CTR RES & DEV,HACHIOJI,TOKYO 193,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 04期

关键词：

D O I：

10.1149/1.2096847

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1174 / 1177

页数：4

共 7 条

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TAKAHASHI, S .

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[2] COMPOSITION OF CVD TUNGSTEN SILICIDES [J].

HARA, T ;

TAKAHASHI, H ;

ISHIZAWA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (05) :1302-1306

[3]

HARA T, 1983, 2ND P S ION BEAM TEC, P25

[4]

HARA T, 1988, C ION BEAM MODIFICAT

[5] ARGON ENTRAPMENT AND EVOLUTION IN SPUTTERED TASI2 FILMS [J].

LEVY, RA ;

GALLAGHER, PK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) :1986-1995

[6] CHANGES IN RESISTIVITY AND COMPOSITION OF CHEMICAL VAPOR-DEPOSITED TUNGSTEN SILICIDE FILMS BY ANNEALING [J].

SHIOYA, Y ;

ITOH, T ;

KOBAYASHI, I ;

MAEDA, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (07) :1475-1479

[7]

TAMURA H, 1987, ELECTROCHEMICAL SOC, P475

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