ARGON ENTRAPMENT AND EVOLUTION IN SPUTTERED TASI2 FILMS

被引：19

作者：

LEVY, RA

GALLAGHER, PK

机构：

[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 08期

关键词：

D O I：

10.1149/1.2114267

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

TANTALUM COMPOUNDS

引用

页码：1986 / 1995

页数：10

共 12 条

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[9]

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[10] ELASTIC STIFFNESS AND THERMAL-EXPANSION COEFFICIENTS OF VARIOUS REFRACTORY SILICIDES AND SILICON-NITRIDE FILMS [J].

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