THE DOMINANT SCATTERING MECHANISMS IN TIN-DOPED INDIUM OXIDE THIN-FILMS

被引：6

作者：

RAUF, IA

机构：

[1] MP Group, Cavendish Laboratory, Cambridge, CB3 OHE, Madingley Road

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1994年 / 27卷 / 05期

关键词：

D O I：

10.1088/0022-3727/27/5/030

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We discuss here the theoretical calculations for resistivity as a function of carrier density based on the dominant ionized impurity scattering mechanism and compare the experimental data with the theoretical lower limit. Our experimental resistivity values are below the theoretical lower limit for a homogeneous distribution of donors.

引用

页码：1083 / 1084

页数：2

共 7 条

[1] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS INDIUM OXIDE [J].