PREPARATION OF EPITAXIAL ALN FILMS BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION ON IR-COATED AND PT-COATED SAPPHIRE SUBSTRATES

被引：25

作者：

ZHANG, W

VARGAS, R

GOTO, T

SOMENO, Y

HIRAI, T

机构：

[1] Institute for Materials Research, Tohoku University, Sendai 980

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.111934

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlN epitaxial films have been fabricated on Ir- and Pt-coated alpha-Al2O3 substrates via electron cyclotron resonance plasma-assisted chemical vapor deposition (ECRPACVD) using an AlBr3-N2-H2-Ar gas system at substrate temperatures ranging from 500 to 700-degrees-C. The epitaxial relationships between AlN films and substrates were determined by x-ray diffraction, x-ray pole figure, and reflection high-energy electron diffraction. The results are useful in practical applications, such as AlN/metal/alpha-Al2O3 Structure in surface acoustic wave (SAW) devices.

引用

页码：1359 / 1361

页数：3

共 16 条

[1] DOUBLE POSITIONING IN SILVER AND GOLD LAYERS DEPOSITED ON MICA [J].