EFFECT OF ELECTRON-ELECTRON INTERACTIONS ON IONIZATION RATE OF CHARGE-CARRIERS IN SEMICONDUCTORS

被引：12

作者：

GHOSH, R ^{[1
]}

ROY, SK ^{[1
]}

机构：

[1] UNIV CALCUTTA,CTR ADV STUDY RADIO PHYS & ELECTR,92 ACHARYA PRAFULLA CHANDRA RD,CALCUTTA 9,INDIA

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 11期

关键词：

D O I：

10.1016/0038-1101(75)90110-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：945 / 948

页数：4

共 12 条

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[2]

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PARANJAPE, BV .

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[4] SECONDARY MULTIPLICATION IN SILICON [J].

MOLL, JJ ;

MEYER, NI .

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[5] CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS [J].

MOLL, JL ;

VANOVERSTRAETEN, R .

SOLID-STATE ELECTRONICS, 1963, 6 (02) :147-157

[6]

MOLL JL, 1964, PHYSICS SEMICONDUCTO

[7] ROLE OF ELECTRON-ELECTRON COLLISIONS IN GALVANOMAGNETIC EFFECTS [J].

PARANJAPE, BV ;

STEWART, BU .

PHYSICAL REVIEW, 1962, 126 (05) :1668-&

[8] A COLLECTIVE DESCRIPTION OF ELECTRON INTERACTIONS .4. ELECTRON INTERACTION IN METALS [J].

PINES, D .

PHYSICAL REVIEW, 1953, 92 (03) :626-636

[9] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].

SHOCKLEY, W .

SOLID-STATE ELECTRONICS, 1961, 2 (01) :35-+

[10]

SZE SM, 1969, PHYSICS SEMICONDUCTO

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