DEEP-SHALLOW TRANSITIONS AND LOSS OF AMPHOTERISM IN TYPE-II SUPERLATTICES

被引：8

作者：

SHEN, J ^{[1
]}

REN, SY ^{[1
]}

DOW, JD ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,DEPT PHYS & ASTRON,TEMPE,AZ 85287

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.69.1089

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The traditional rules of effective-mass theory, that a substitutional dopant is a donor (acceptor) if it lies to the right (left) in the periodic table of the atom it replaces, are shown to be broken often in type-II-misaligned superlattices such as InAs/GaSb. Impurities commonly undergo deep-shallow transitions and transitions to "false valence," and group-IV substitutional dopants can lose their amphoterism as remote layer thicknesses are varied.

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页码：1089 / 1092

页数：4

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