ELECTRON TRAPS IN ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引:68
作者
YAMANAKA, K [1 ]
NARITSUKA, S [1 ]
KANAMOTO, K [1 ]
MIHARA, M [1 ]
ISHII, M [1 ]
机构
[1] OPTOELECTR JOINT RES LAB,KAWASAKI 211,JAPAN
关键词
D O I
10.1063/1.338330
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:5062 / 5069
页数:8
相关论文
共 33 条
[1]   BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2 [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1985, 55 (21) :2340-2343
[2]   CORRELATION OF PHOTOLUMINESCENCE AND DEEP TRAPPING IN METALORGANIC CHEMICAL VAPOR-DEPOSITED ALXGA1-XAS(0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.40) [J].
BHATTACHARYA, PK ;
SUBRAMANIAN, S .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3664-3668
[3]   DEEP STATES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
BLOOD, P ;
HARRIS, JJ .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :993-1007
[4]   MEASUREMENT OF MIS CAPACITORS WITH OXYGEN-DOPED ALXGA1-XAS INSULATING LAYERS ON GAAS [J].
CASEY, HC ;
CHO, AY ;
LANG, DV ;
NICOLLIAN, EH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1408-1411
[5]   COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].
CHAND, N ;
HENDERSON, T ;
KLEM, J ;
MASSELINK, WT ;
FISCHER, R ;
CHANG, YC ;
MORKOC, H .
PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492
[6]   PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].
CHIANG, SY ;
PEARSON, GL .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2986-2991
[7]  
HIKOSAKA K, 1981, I PHYS C SER, V63, P233
[8]  
Johnson N. M., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P481
[9]   INFLUENCE OF ALLOY COMPOSITION, SUBSTRATE-TEMPERATURE, AND DOPING CONCENTRATION ON ELECTRICAL-PROPERTIES OF SI-DOPED N-ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
KUNZEL, H ;
PLOOG, K ;
WUNSTEL, K ;
ZHOU, BL .
JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (02) :281-308
[10]   INVESTIGATION OF PERSISTENT PHOTOCONDUCTIVITY IN SI-DOPED N-ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
KUNZEL, H ;
FISCHER, A ;
KNECHT, J ;
PLOOG, K .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 32 (02) :69-78