HIGHLY CARBON-DOPED P-TYPE GA0.5IN0.5AS AND GA0.5IN0.5P BY CARBON-TETRACHLORIDE IN GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：69

作者：

CHIN, TP ^{[1
]}

KIRCHNER, PD ^{[1
]}

WOODALL, JM ^{[1
]}

TU, CW ^{[1
]}

机构：

[1] UNIV CALIF SAN DIEGO,DEPT ELECT & COMP ENGN,LA JOLLA,CA 92093

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 22期

关键词：

D O I：

10.1063/1.105835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly carbon-doped, highly p-type Ga0.5In0.5As and Ga0.5In0.5P epilayers were grown by gas-source molecular beam epitaxy (GSMBE) using carbon tetrachloride (CCl4). Growth temperatures slightly below conventional values were used to increase the carbon incorporation, and a short-duration post-growth anneal near the growth temperature was necessary in order to obtain the highest hole concentrations, which were p = 3 X 10(19) cm-3 for Ga0.5In0.5As and p= 5 X 10(18) cm-3 for Ga0.5In0.5P. This is the first report of significant p-type carbon doping for Ga0.5In0.5P and the highest concentration from carbon doping yet reported for both ternary compounds. Reversible acceptor passivation from hydrogen species in the growth environment is a plausible explanation for the annealing behavior.

引用

页码：2865 / 2867

页数：3

共 23 条

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