PULSED-LIGHT SOAKING OF HYDROGENATED AMORPHOUS-SILICON

被引：41

作者：

STUTZMANN, M ^{[1
]}

ROSSI, MC ^{[1
]}

BRANDT, MS ^{[1
]}

机构：

[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,D-85748 GARCHING,GERMANY

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.50.11592

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate in detail the creation of mestastable dangling bond defects in undoped hydrogenated amorphous silicon by illumination with pulsed-light sources. Based on the electron-hole recombination model for defect creation, the kinetics of the defect generation process is analyzed theoretically for different experimental conditions (pulse length, pulse energy, repetition rate, and average intensity). These theoretical results are then compared to experimental observations using both monochromatic and polychromatic (''white light'') pulse sources. Implications of pulse illumination for accelerated testing of the stability of amorphous-silicon-based solar cells are also discussed. © 1994 The American Physical Society.

引用

页码：11592 / 11605

页数：14

共 21 条

[1] AN ALTERNATIVE DEGRADATION METHOD FOR AMORPHOUS HYDROGENATED SILICON - THE CONSTANT DEGRADATION METHOD [J].

BRANDT, MS ;

STUTZMANN, M .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (05) :2507-2515

[2] KINETIC AND STEADY-STATE EFFECTS OF ILLUMINATION ON DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].

BUBE, RH ;

REDFIELD, D .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) :820-828

[3] DEFECT RELAXATION IN AMORPHOUS-SILICON - STRETCHED EXPONENTIALS, THE MEYER-NELDEL RULE, AND THE STAEBLER-WRONSKI EFFECT [J].

CRANDALL, RS .

PHYSICAL REVIEW B, 1991, 43 (05) :4057-4070

[4] KINETICS OF THE STAEBLER-WRONSKI EFFECT [J].

CUTRERA, M ;

KOROPECKI, RR ;

GENNARO, AM ;

ARCE, R .

PHYSICAL REVIEW B, 1987, 35 (03) :1442-1445

[5] RECOMBINATION PROCESSES IN A-SI-H - SPIN-DEPENDENT PHOTOCONDUCTIVITY [J].

DERSCH, H ;

SCHWEITZER, L ;

STUKE, J .

PHYSICAL REVIEW B, 1983, 28 (08) :4678-4684

[6] EXPERIMENTAL-STUDY OF THE GAMMA-X ELECTRON-TRANSFER IN TYPE-II (AL,GA)AS/ALAS SUPERLATTICES AND MULTIPLE-QUANTUM-WELL STRUCTURES [J].

FELDMANN, J ;

NUNNENKAMP, J ;

PETER, G ;

GOBEL, E ;

KUHL, J ;

PLOOG, K ;

DAWSON, P ;

FOXON, CT .

PHYSICAL REVIEW B, 1990, 42 (09) :5809-5821

[7] LIGHT-INDUCED ANNEALING OF METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].

GRAEFF, CFO ;

BUHLEIER, R ;

STUTZMANN, M .

APPLIED PHYSICS LETTERS, 1993, 62 (23) :3001-3003

[8] SATURATION OF THE DEFECT DENSITY IN HYDROGENATED AMORPHOUS-SILICON BY PULSED-LIGHT SOAKING [J].

HATA, N ;

GANGULY, G ;

WAGNER, S ;

MATSUDA, A .

APPLIED PHYSICS LETTERS, 1992, 61 (15) :1817-1819

[9]

KAKLIOS J, 1987, PHYS REV LETT, V59, P1037

[10] DEMONSTRATION OF A NEW TOOL FOR DEGRADATION OF AMORPHOUS HYDROGENATED SILICON AND THE IMPORTANCE OF THE FERMI LEVEL SHIFT [J].

KOCKA, J ;

STIKA, O ;

KLIMA, O .

APPLIED PHYSICS LETTERS, 1993, 62 (10) :1082-1084

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