FILM-SUBSTRATE INTERACTION IN SI-TA AND SI-TA2O5 STRUCTURES

被引：15

作者：

REVESZ, AG ^{[1
]}

KIRKENDALL, TD ^{[1
]}

机构：

[1] COMSAT LABS,CLARKSBURG,MD 20734

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 10期

关键词：

D O I：

10.1149/1.2132629

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1514 / 1519

页数：6

共 15 条

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[3] RUTHERFORD BACKSCATTERING INVESTIGATION OF THERMALLY OXIDIZED TANTALUM ON SILICON [J].

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REVESZ, AG ;

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THIN SOLID FILMS, 1976, 33 (03) :315-322

[4] DEPENDENCE OF MOS DEVICE RADIATION-SENSITIVITY ON OXIDE IMPURITIES [J].

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PHILLIPS, B .

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[6] SECONDARY ION EMISSION FOR SURFACE AND IN-DEPTH ANALYSIS OF TANTALUM THIN-FILMS [J].

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LEWIS, RK .

ANALYTICAL CHEMISTRY, 1973, 45 (06) :869-880

[7] EFFECT OF ANODIC FILMS ON GASEOUS OXIDATION OF TANTALUM [J].

PAWEL, RE ;

CAMPBELL, JJ .

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[8] OBSERVATIONS ON FORMATION AND ETCHING OF PLATINUM SILICIDE [J].

RAND, MJ ;

ROBERTS, JF .

APPLIED PHYSICS LETTERS, 1974, 24 (02) :49-51

[9]

Revesz A. G., 1973, COMSAT Technical Review, V3, P449

[10]

Revesz A. G., 1973, Journal of Non-Crystalline Solids, V11, P309, DOI 10.1016/0022-3093(73)90020-3

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