FABRICATION OF SUBMICROMETER PARALLELOGRAMIC-SHAPED GRATINGS IN SIO2

被引：6

作者：

LI, M

LIN, JCH

CHERRILL, MJ

SHEARD, SJ

机构：

[1] Department of Engineering Science, University of Oxford, Oxford OX1 3PJ, Parks Road

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 25期

关键词：

GRATING FILTERS; REACTIVE ION ETCHING;

D O I：

10.1049/el:19941443

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication process of submicrometre parallelogramic-shaped gratings is reported, which involves an image reversal resist process and a novel oblique reactive ion etching (RIE) configuration. A submicrometre parallelogramic grating with 40 degrees blaze angle is fabricated using this method.

引用

页码：2126 / 2128

页数：3

共 5 条

[1] HOLOGRAPHIC LITHOGRAPHY WITH THICK PHOTORESIST [J].