EVIDENCE FOR NONEQUILIBRIUM FREE-ELECTRON DENSITY IN ALGAAS AT LOW-TEMPERATURES

被引：2

作者：

GHEZZI, C ^{[1
]}

MOSCA, R ^{[1
]}

BOSACCHI, A ^{[1
]}

FRANCHI, S ^{[1
]}

GOMBIA, E ^{[1
]}

VANZETTI, LE ^{[1
]}

机构：

[1] CNR,IST MASPEC,I-43100 PARMA,ITALY

来源：

SOLID STATE COMMUNICATIONS | 1991年 / 78卷 / 02期

关键词：

D O I：

10.1016/0038-1098(91)90274-Y

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Due to the strong temperature dependence of the capture rate, the DX centre in AlGaAs is expected to show non-equilibrium occupancy at low temperatures. Results of Thermally Stimulated Capacitance and Capacitance-Voltage measurements, carried out at 77 K on Au-Al(x)Ga1-xAs (x = 0.25) Schottky barriers, are strongly influenced by the cooling rate. This demonstrate that in practical experiments the free electron density commonly observed at low temperature is far from thermodynamical equilibrium.

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页码：159 / 162

页数：4

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