ANALYSIS OF THE SHALLOW AND DEEP CENTER OCCUPANCIES IN SI-DOPED ALXGA1-XAS USING A MULTILEVEL DONOR MODEL

被引：14

作者：

BLOM, PWM

KOENRAAD, PM

BLOM, FAP

WOLTER, JH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 09期

关键词：

D O I：

10.1063/1.343969

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4269 / 4274

页数：6

共 32 条

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