LARGE AREA ELECTRON-BEAM ANNEALING

被引：19

作者：

MOORE, CA ^{[1
]}

ROCCA, JJ ^{[1
]}

JOHNSON, T ^{[1
]}

COLLINS, GJ ^{[1
]}

RUSSELL, PE ^{[1
]}

机构：

[1] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 03期

关键词：

D O I：

10.1063/1.94289

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：290 / 292

页数：3

共 7 条

[1] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J].

GREENWALD, AC ;

KIRKPATRICK, AR ;

LITTLE, RG ;

MINNUCCI, JA .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :783-787

[2] PLASMA ANNEALING OF ION-IMPLANTED SEMICONDUCTORS [J].

IANNO, NJ ;

VERDEYEN, JT ;

CHAN, SS ;

STREETMAN, BG .

APPLIED PHYSICS LETTERS, 1981, 39 (08) :622-624

[3] MICROSECOND TIME-SCALE SI REGROWTH USING A LINE-SOURCE ELECTRON-BEAM [J].

KNAPP, JA ;

PICRAUX, ST .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :873-875

[4] SCANNING-ELECTRON-BEAM ANNEALING OF ARSENIC-IMPLANTED SILICON [J].

REGOLINI, JL ;

GIBBONS, JF ;

SIGMON, TW ;

PEASE, RFW ;

MAGEE, TJ ;

PENG, J .

APPLIED PHYSICS LETTERS, 1979, 34 (06) :410-412

[5] MULTIKILOWATT ELECTRON-BEAMS FOR PUMPING CW ION LASERS [J].

ROCCA, JJ ;

MEYER, JD ;

YU, Z ;

FARRELL, M ;

COLLINS, GJ .

APPLIED PHYSICS LETTERS, 1982, 41 (09) :811-813

[6] SHORT-TIME ANNEALING [J].

SEDGWICK, TO .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :484-493

[7] SCANNED ELECTRON-BEAM ANNEALING OF BORON-IMPLANTED DIODES [J].

YEP, TO ;

FULKS, RT ;

POWELL, RA .

APPLIED PHYSICS LETTERS, 1981, 38 (03) :162-164

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