PLASMA ANNEALING OF ION-IMPLANTED SEMICONDUCTORS

被引：14

作者：

IANNO, NJ

VERDEYEN, JT

CHAN, SS

STREETMAN, BG

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 08期

关键词：

D O I：

10.1063/1.92825

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：622 / 624

页数：3

共 14 条

[1] MONTE-CARLO SIMULATION OF ELECTRONS WITHIN CATHODE FALL OF A GLOW-DISCHARGE IN HELIUM [J].

AN, TN ;

MARODE, E ;

JOHNSON, PC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (16) :2317-2328

[2] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J].

AUSTON, DH ;

GOLOVCHENKO, JA ;

SMITH, PR ;

SURKO, CM ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :539-541

[3] ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :137-140

[4]

GAT A, 1978, APPL PHYS LETT, V32, P147

[5] HETEROEPITAXY OF A DEPOSITED AMORPHOUS-GERMANIUM LAYER ON A SILICON SUBSTRATE BY LASER ANNEALING [J].

GOLECKI, I ;

KENNEDY, EF ;

LAU, SS ;

MAYER, JW ;

TSENG, WF ;

ECKARDT, RC ;

WAGNER, RJ .

THIN SOLID FILMS, 1979, 57 (01) :L13-L15

[6] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J].

GREENWALD, AC ;

KIRKPATRICK, AR ;

LITTLE, RG ;

MINNUCCI, JA .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :783-787

[7]

JOY DC, 1974, QUANTITATIVE SCANNIN, pCH6

[8] THE HOLLOW-CATHODE EFFECT AND THE THEORY OF GLOW DISCHARGES [J].

LITTLE, PF ;

VONENGEL, A .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1954, 224 (1157) :209-227

[9]

RATNAKUMAR KN, 1979, APPL PHYS LETT, V35, P463, DOI 10.1063/1.91170

[10] SCANNING-ELECTRON-BEAM ANNEALING OF ARSENIC-IMPLANTED SILICON [J].

REGOLINI, JL ;

GIBBONS, JF ;

SIGMON, TW ;

PEASE, RFW ;

MAGEE, TJ ;

PENG, J .

APPLIED PHYSICS LETTERS, 1979, 34 (06) :410-412

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