PHOTOVOLTAGE STUDIES OF N-TYPE INP (100)

被引：3

作者：

DAHLBERG, SC ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

SURFACE SCIENCE | 1976年 / 60卷 / 01期

关键词：

D O I：

10.1016/0039-6028(76)90017-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：231 / 238

页数：8

共 18 条

[1] COMPOSITIONAL AND STRUCTURAL-CHANGES THAT ACCOMPANY THERMAL ANNEALING OF (100) SURFACES OF GAAS, INP AND GAP IN VACUUM [J].

BAYLISS, CR ;

KIRK, DL .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (02) :233-&

[2] PHOTOEMISSION FROM INP-CS-O [J].

BELL, RL ;

UEBBING, JJ .

APPLIED PHYSICS LETTERS, 1968, 12 (03) :76-&

[3]

BELL RL, 1973, NEGATIVE ELECTRON AF

[4] SURFACE PHOTOVOLTAGE SPECTROSCOPY OF ELECTRONIC SURFACE STATES ON CLEAVED GERMANIUM (111) SURFACES [J].

BUCHEL, M ;

LUTH, H .

SURFACE SCIENCE, 1975, 50 (02) :451-464

[5] EFFECT OF ADSORBED GASES AND TEMPERATURE ON PHOTOVOLTAGE SPECTRUM OF GAAS [J].

DAHLBERG, SC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (05) :1056-1059

[6]

DAHLBERG SC, 1976, SURF SCI, V59

[7]

FLINN L, 1964, SURFACE SCIENCE, V2, P136

[8] TEMPERATURE-DEPENDENCE AND ILLUMINATION-DEPENDENCE OF WORK FUNCTION OF GALLIUM-ARSENIDE [J].

GALBRAIT.LK ;

FISCHER, TE .

SURFACE SCIENCE, 1972, 30 (01) :185-&

[9] SURFACE PHOTOVOLTAGE SPECTROSCOPY - NEW APPROACH TO STUDY OF HIGH-GAP SEMICONDUCTOR SURFACES [J].

GATOS, HC ;

LAGOWSKI, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01) :130-135

[10] ELECTRONIC CHARACTERISTICS OF REAL CDS SURFACES [J].

LAGOWSKI, J ;

GATOS, HC ;

BALESTRA, CL .

SURFACE SCIENCE, 1972, 29 (01) :213-&

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