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APPROXIMATION FOR THE FERMI DIRAC INTEGRAL WITH APPLICATIONS TO DEGENERATELY DOPED SOLAR-CELLS AND OTHER SEMICONDUCTOR-DEVICES
被引:28
作者
:
ABIDI, STH
论文数:
0
引用数:
0
h-index:
0
ABIDI, STH
MOHAMMAD, SN
论文数:
0
引用数:
0
h-index:
0
MOHAMMAD, SN
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1984年
/ 56卷
/ 11期
关键词
:
D O I
:
10.1063/1.333860
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:3341 / 3343
页数:3
相关论文
共 8 条
[1]
APPROXIMATIONS FOR FERMI-DIRAC INTEGRALS, ESPECIALLY THE FUNCTION F1/2(ETA) USED TO DESCRIBE ELECTRON-DENSITY IN A SEMICONDUCTOR
[J].
BLAKEMORE, JS
论文数:
0
引用数:
0
h-index:
0
BLAKEMORE, JS
.
SOLID-STATE ELECTRONICS,
1982,
25
(11)
:1067
-1076
[2]
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[3]
INFLUENCE OF HEAVY DOPING ON EMITTER EFFICIENCY OF A BIPOLAR TRANSISTOR
[J].
DEMAN, HJJ
论文数:
0
引用数:
0
h-index:
0
DEMAN, HJJ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1971,
ED18
(10)
:833
-+
[4]
ANALYTIC APPROXIMATIONS FOR FERMI ENERGY OF AN IDEAL FERMI GAS
[J].
JOYCE, WB
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
JOYCE, WB
;
DIXON, RW
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
DIXON, RW
.
APPLIED PHYSICS LETTERS,
1977,
31
(05)
:354
-356
[5]
ANALYTIC APPROXIMATIONS FOR FERMI ENERGY IN (AL,GA)AS
[J].
JOYCE, WB
论文数:
0
引用数:
0
h-index:
0
JOYCE, WB
.
APPLIED PHYSICS LETTERS,
1978,
32
(10)
:680
-681
[6]
EINSTEIN RELATION FOR DEGENERATE CARRIER CONCENTRATIONS
[J].
KROEMER, H
论文数:
0
引用数:
0
h-index:
0
KROEMER, H
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(07)
:850
-850
[7]
BANDGAP NARROWING IN MODERATELY TO HEAVILY DOPED SILICON
[J].
LANYON, HPD
论文数:
0
引用数:
0
h-index:
0
机构:
ITEK CORP,LEXINGTON,MA 02173
ITEK CORP,LEXINGTON,MA 02173
LANYON, HPD
;
TUFT, RA
论文数:
0
引用数:
0
h-index:
0
机构:
ITEK CORP,LEXINGTON,MA 02173
ITEK CORP,LEXINGTON,MA 02173
TUFT, RA
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(07)
:1014
-1018
[8]
MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS
[J].
SLOTBOOM, JW
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
SLOTBOOM, JW
;
DEGRAAFF, HC
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
DEGRAAFF, HC
.
SOLID-STATE ELECTRONICS,
1976,
19
(10)
:857
-862
←
1
→
共 8 条
[1]
APPROXIMATIONS FOR FERMI-DIRAC INTEGRALS, ESPECIALLY THE FUNCTION F1/2(ETA) USED TO DESCRIBE ELECTRON-DENSITY IN A SEMICONDUCTOR
[J].
BLAKEMORE, JS
论文数:
0
引用数:
0
h-index:
0
BLAKEMORE, JS
.
SOLID-STATE ELECTRONICS,
1982,
25
(11)
:1067
-1076
[2]
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[3]
INFLUENCE OF HEAVY DOPING ON EMITTER EFFICIENCY OF A BIPOLAR TRANSISTOR
[J].
DEMAN, HJJ
论文数:
0
引用数:
0
h-index:
0
DEMAN, HJJ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1971,
ED18
(10)
:833
-+
[4]
ANALYTIC APPROXIMATIONS FOR FERMI ENERGY OF AN IDEAL FERMI GAS
[J].
JOYCE, WB
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
JOYCE, WB
;
DIXON, RW
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
DIXON, RW
.
APPLIED PHYSICS LETTERS,
1977,
31
(05)
:354
-356
[5]
ANALYTIC APPROXIMATIONS FOR FERMI ENERGY IN (AL,GA)AS
[J].
JOYCE, WB
论文数:
0
引用数:
0
h-index:
0
JOYCE, WB
.
APPLIED PHYSICS LETTERS,
1978,
32
(10)
:680
-681
[6]
EINSTEIN RELATION FOR DEGENERATE CARRIER CONCENTRATIONS
[J].
KROEMER, H
论文数:
0
引用数:
0
h-index:
0
KROEMER, H
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(07)
:850
-850
[7]
BANDGAP NARROWING IN MODERATELY TO HEAVILY DOPED SILICON
[J].
LANYON, HPD
论文数:
0
引用数:
0
h-index:
0
机构:
ITEK CORP,LEXINGTON,MA 02173
ITEK CORP,LEXINGTON,MA 02173
LANYON, HPD
;
TUFT, RA
论文数:
0
引用数:
0
h-index:
0
机构:
ITEK CORP,LEXINGTON,MA 02173
ITEK CORP,LEXINGTON,MA 02173
TUFT, RA
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(07)
:1014
-1018
[8]
MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS
[J].
SLOTBOOM, JW
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
SLOTBOOM, JW
;
DEGRAAFF, HC
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
DEGRAAFF, HC
.
SOLID-STATE ELECTRONICS,
1976,
19
(10)
:857
-862
←
1
→