PHOTOCONDUCTIVE FREQUENCY-RESOLVED SPECTROSCOPY OF SEMICONDUCTORS - AN ANALYSIS OF LIFETIME DISTRIBUTIONS

被引:9
作者
LOURENCO, MA
HOMEWOOD, KP
机构
[1] Dept. of Electron. and Electr. Eng., Surrey Univ., Guildford
关键词
D O I
10.1088/0268-1242/8/7/015
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present an analysis, in the frequency domain, of the carrier recombination kinetics most frequently encountered in semiconductor systems under quasistatic excitation, The analysis can be used to interpret carrier lifetime distributions obtained in frequency-resolved spectroscopy experiments. The effect of trapping on the lifetime distribution is analysed in detail and we discuss how frequency-resolved spectroscopy can be used to obtain the major trap parameters.
引用
收藏
页码:1277 / 1282
页数:6
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